Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor
- T.N. Jackson
- G. Pepper
- et al.
- 1990
- IEDM 1990
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45 results for T.N. Jackson
SELF-ALIGNED PROCESSES FOR THE GaAs GATE FET.
- H. Baratte
- D.C. La Tulipe
- et al.
- 1985
- IEDM 1985
Gate-Self-Aligned P-Channel Germanium Misfet's
- Thomas N. Jackson
- C.M. Ransom
- et al.
- 1991
- IEEE Electron Device Letters
Depletion-Mode GaAs SISFET's By Selective Ion Implantation
- H. Baratte
- Paul M. Solomon
- et al.
- 1987
- IEEE Electron Device Letters
Fermi-level pinning by misfit dislocations at GaAs interfaces
- J. Woodall
- G.D. Pettit
- et al.
- 1983
- Physical Review Letters
An Electrochemical P-N Junction Etch-Stop for the Formation of Silicon Microstructures
- T.N. Jackson
- M.A. Tischler
- et al.
- 1981
- IEEE Electron Device Letters
Undoped SiGe heterostructure field effect transistors
- T.N. Jackson
- S. Nelson
- et al.
- 1993
- Device Research Conference 1993
Process damage and contamination effects for shallow Si implanted GaAs
- H. Barratte
- G. Scilla
- et al.
- 1989
- ECS Meeting 1989
FETs with superconducting channels
- A.W. Kleinsasser
- T.N. Jackson
- 1989
- IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
Process Damage and Contamination Effects for Shallow Si Implanted GaAs
- H. Baratte
- A.J. Fleischman
- et al.
- 2019
- JES