J. Tersoff
Physical Review B
Growth of Ge islands on Si(001) is observed in real time with high spatial resolution, using UHV transmission electron microscopy. We are able to monitor the formation of successive strain-relieving dislocations. The shape of the island oscillates as it grows, with each cycle corresponding to the introduction of one dislocation. Such growth cycles are shown to be a general feature of the growth of strain-relaxed islands, occurring even in equilibrium. © 1994 The American Physical Society.
J. Tersoff
Physical Review B
J.W. Bartha, P.O. Hahrt, et al.
JVSTA
G. Katsaros, A. Rastelli, et al.
Applied Physics Letters
J. Tersoff
Physical Review B