Cyclic growth of strain-relaxed islands
- F.K. LeGoues
- M.C. Reuter
- et al.
- 1994
- Physical Review Letters
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4 results for M. Hammar
In situ TEM study of the growth of Ge on Si(111)
- F.K. LeGoues
- M. Hammar
- et al.
- 1996
- Surface Science
In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si(001)/Ge
- M. Hammar
- F.K. LeGoues
- et al.
- 1996
- Surface Science
Relaxation mechanism of Ge islands/Si(001) at low temperature
- F. Legoues
- J. Tersoff
- et al.
- 1995
- Applied Physics Letters