PaperOne-dimensional numerical simulation of ac discharges in a high-pressure mixture of Ne+0.1% Ar confined to a narrow gap between insulated metal electrodesO. Sahni, C. Lanza, et al.Journal of Applied Physics
PaperEfficient electroluminescence from GaAs diodes at 300°KH. Rupprecht, J. Woodall, et al.Applied Physics Letters
PaperEfficiency Calculations for Thin-Film Polycrystalline Semiconductor Schottky Barrier Solar CellsC. Lanza, H.J. HovelIEEE T-ED
PaperFermi-level pinning by misfit dislocations at GaAs interfacesJ. Woodall, G.D. Pettit, et al.Physical Review Letters
