H.J. Hovel
Solid-State Electronics
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater. © 1977 IEEE. All rights reserved.
H.J. Hovel
Solid-State Electronics
B. Welber, C. Lanza
Opto-electronics
S.M. Vernon, A.E. Blakeslee, et al.
JES
Pei Y. Tsai, Marlene Almonte, et al.
ISTFA 2005