Conference paper
Strain engineering for silicon CMOS technology
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater. © 1977 IEEE. All rights reserved.
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005
G.D. Pettit, J. Woodall, et al.
Applied Physics Letters
G. Shahidi, C. Blair, et al.
VLSI Technology 1993
H.J. Hovel
JES