Benjamin G. Lee, Nicolas Dupuis, et al.
Journal of Lightwave Technology
We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ·L figure of merit of 0.12V·mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform. © 2012 Optical Society of America.
Benjamin G. Lee, Nicolas Dupuis, et al.
Journal of Lightwave Technology
William M. J. Green, Solomon Assefa, et al.
FiO 2011
Ren-Jye Shiue, Yuanda Gao, et al.
Nano Letters
Yurii A. Vlasov, Fengnian Xia, et al.
CLEO 2008