Silicon nanophotonic mid-IR optical modulator
Mackenzie A. Van Camp, Solomon Assefa, et al.
CLEO 2012
We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ·L figure of merit of 0.12V·mm, and an extinction ratio of -23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform. © 2012 Optical Society of America.
Mackenzie A. Van Camp, Solomon Assefa, et al.
CLEO 2012
Benjamin G. Lee, Nicolas Dupuis, et al.
Journal of Lightwave Technology
Solomon Assefa, Fengnian Xia, et al.
OECC 2009
Michael C. Gaidis, Eugene J. O'Sullivan, et al.
IBM J. Res. Dev