Density of &quot;amorphous&quot; Ge

T.B. Light

doi:10.1103/PhysRevLett.22.999

Physical Review Letters

Paper

12 May 1969

Density of "amorphous" Ge

View publication

Abstract

The density of vapor-deposited "amorphous" Ge was determined from x-ray-diffraction absorption measurements and found to be the same as the density of crystalline Ge within ±5%. © 1969 The American Physical Society.

Paper

Thermal forming of niobium oxide switchable resistors

K.C. Park, M. Berkenblit, et al.

Journal of Electronic Materials

Paper

Preferred orientation in bias-sputtered nickel chromium films

E. Stern, T.B. Light

Applied Physics Letters

Paper

Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers

M. Berkenblit, T.B. Light, et al.

JES

Paper

Accommodation of misfit across the interface between crystals of semiconducting elements or compounds

J.W. Matthews, S. Mader, et al.

Journal of Applied Physics

View all publications

Abstract

Related

Thermal forming of niobium oxide switchable resistors

Preferred orientation in bias-sputtered nickel chromium films

Anomalous Thermal Behavior of Boron-Doped Low-Temperature Ge Epitaxial Layers

Accommodation of misfit across the interface between crystals of semiconducting elements or compounds