M. Hargrove, S.W. Crowder, et al.
IEDM 1998
One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 °C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. Oncurrent density (0.02 A/cm2) and on/off-current ratio (4 × 102) were obtained in the junction annealed at 300 °C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples. © 2013 Elsevier B.V. All rights reserved.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Imran Nasim, Melanie Weber
SCML 2024
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics