Performance measurement and data base design
Alfonso P. Cardenas, Larry F. Bowman, et al.
ACM Annual Conference 1975
MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This paper is an overview of MRAM design considerations. Topics covered include MRAM fundamentals, array architecture, several associated design studies, and scaling challenges. In addition, a 16-Mb MRAM demonstration vehicle is described, and performance results are presented. ©Copyright 2006 by International Business Machines Corporation.
Alfonso P. Cardenas, Larry F. Bowman, et al.
ACM Annual Conference 1975
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
David S. Kung
DAC 1998
Renu Tewari, Richard P. King, et al.
IS&T/SPIE Electronic Imaging 1996