A 14 nm embedded STT-MRAM CMOS technology
- Daniel C. Edelstein
- M. Rizzolo
- et al.
- 2020
- IEDM 2020
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24 results for J. DeBrosse
A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
- J. DeBrosse
- T. Maffitt
- et al.
- 2015
- CICC 2015
Feasibility of an active-read approach for spin-torque switched magnetic tunnel junctions in a random access memory
- Jonathan Z. Sun
- John Debrosse
- et al.
- 2013
- Journal of Applied Physics
A study of write margin of spin torque transfer magnetic random access memory technology
- Tai Min
- Qiang Chen
- et al.
- 2010
- IEEE Transactions on Magnetics
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- R. Beach
- T. Min
- et al.
- 2008
- IEDM 2008
Design considerations for MRAM
- Thomas M. Maffitt
- John K. DeBrosse
- et al.
- 2006
- IBM J. Res. Dev
Recent advances in MRAM technology
- W.J. Gallagher
- D.W. Abraham
- et al.
- 2005
- VLSI Technology 2005
A 16-Mb MR AM featuring bootstrapped write drivers
- Dietmar Gogl
- Christian Arndt
- et al.
- 2005
- IEEE Journal of Solid-State Circuits
A 16Mb MRAM featuring bootstrapped write drivers
- J.K. DeBrosse
- C. Arndt
- et al.
- 2004
- VLSI Circuits 2004
A High-Speed 128-kb MRAM Core for Future Universal Memory Applications
- John DeBrosse
- Dietmar Gogl
- et al.
- 2004
- IEEE Journal of Solid-State Circuits