Stable SRAM cell design for the 32 nm node and beyond
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using dimensions of the order of 1 μ,. Scaling relationships are presented which show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation to provide shallow source and drain regions and a nonuniform substrate doping profile. One-dimensional models are used to predict the substrate doping profile and the corresponding threshold voltage versus source voltage characteristic. A two-dimensional current transport model is used to predict the relative degree of short-channel effects for different device parameter combinations. Polysilicon-gate MOSFET's with channel lengths as short as 0.5 μ were fabricated. and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small devices in highly miniaturized integrated circuits is projected. Copyright © 1974 by The Institute of Electrical and Electronics Engineers, Inc.
Leland Chang, David M. Fried, et al.
VLSI Technology 2005
George A. Sai-Halasz, Matthew R. Wordeman, et al.
IEEE Journal of Solid-State Circuits
Matthew R. Wordeman, Robert H. Dennard
IEEE T-ED
Robert H. Dennard, Fritz H. Gaensslen, et al.
IEEE T-ED