Paper50-GHz Self-Aligned Silicon Bipolar Transistors with Ion-Implanted Base ProfilesJames Warnock, John D. Cressler, et al.IEEE Electron Device Letters
PaperLinearity of graphene field-effect transistorsKeith A. Jenkins, Damon B. Farmer, et al.Applied Physics Letters
PaperIntegrated RF and microwave components in BiCMOS technologyJoachim N. Burghartz, Mehmet Soyuer, et al.IEEE Transactions on Electron Devices
PaperThe Design and Optimization of High-Performance, Double-Poly Self-Aligned p-n-p TechnologyPong-Fei Lu, James D. Warnock, et al.IEEE T-ED