J.C. Marinace
JES
We report on novel technique for determining transport parameters in a-Si using a waveguide structure. The technique is based on measuring the screening of an applied voltage by photocarriers within the guide. The results, which are analyzed by rate equations which balance recombination, drift and diffusion currents, yield electron and hole mobilities of 0.6 and 0.2 cm2/(V sec) respectively. The hole mobility is close to its microscopic value. © 1991 Elsevier Science Publishers B.V. All rights reserved.
J.C. Marinace
JES
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films