Photobleaching of PL and temperature dependence of ESR in nitrogen-rich amorphous silicon nitride films
- D. Chen
- J.M. Viner
- et al.
- 1994
- MRS Spring Meeting 1994
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60 results for Jerzy Kanicki
Spatial Charge Distribution in As-Deposited and UV-Illuminated Gate-Quality Nitrogen-Rich Silicon Nitride
- Jerzy Kanicki
- D. Jousse
- 1989
- IEEE Electron Device Letters
Paramagnetic nitrogen defects in silicon nitride
- W.L. Warren
- Jerzy Kanicki
- et al.
- 1992
- MRS Proceedings 1992
Simple polysilicon thin film transistor structure for achieving high on/off current ratio independent of gate bias
- Jerzy Kanicki
- M.K. Hatalis
- 1992
- SSDM 1992
Nitrogen dangling bonds in hydrogenated amorphous silicon nitride thin films
- Jerzy Kanicki
- W.L. Warren
- et al.
- 1992
- SSDM 1992
Bias-stress-induced stretched-exponential time dependence of charge injection and trapping in amorphous silicon thin-film transistors
- Frank R. Libsch
- Jerzy Kanicki
- 1992
- SSDM 1992
Electron spin resonance spectroscopy of defects in low temperature dielectric films
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Proceedings of SPIE 1989
CONTACT PROPERTIES OF METAL/POLYACETYLENE INTERFACES.
- Jerzy Kanicki
- 1984
- ECS Meeting 1984
SCHOTTKY BARRIER FORMATION AT METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES.
- Jerzy Kanicki
- M. Osama Aboelfotoh
- et al.
- 1984
- ICPS Physics of Semiconductors 1984
AMORPHOUS HYDROGENATED SILICON SOLAR CELLS WITH THE HOMOGENEOUS CHEMICAL VAPOR DEPOSITION TECHNIQUE.
- J.F. Nijs
- Jerzy Kanicki
- et al.
- 1983
- E. C. Photovoltaic Solar Energy Conference 1983