Abstract
The paper describes the development of an aluminum chemical mechanical planarization process that was successfully integrated into the dual damascene technology producing 1 Gb dynamic random access memory chips meeting all yield and sheet resistance requirements. Three of the major problems of chemical mechanical polishing of Al-0.5 Cu alloys, i.e., copper plate-out on titanium liners, array erosion, and slow polish rate were solved by adding Ce4+ ions to the polishing slurry. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1385849] All rights reserved.