Mark W. Dowley
Solid State Communications
We present a low-damage processing technique for fabricating quantum point contacts (QPCs) in the two-dimensional electron gas (2DEG) of a strained Si/Si0.7Ge0.3 heterostructure. The result is a QPC conductance characteristic which at T = 4.2 K exhibits a series of smeared step-like features. The QPCs were fabricated with a novel technique which combines electron-beam lithography with low-damage selective wet-chemical pattern transfer. The constriction of the QPC is formed by an etched groove with a break w positioned at the mesa center of a field-effect device perpendicular to the transistor channel. After subtracting a series resistance of 800 Ω five quantum steps can be observed in the differential conductance each of them contributing 4e2/h. We attribute the steps to the quantum-ballistic 1D-transport through the constriction. © 2002 Elsevier Science B.V. All rights reserved.
Mark W. Dowley
Solid State Communications
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
J.A. Barker, D. Henderson, et al.
Molecular Physics
Lawrence Suchow, Norman R. Stemple
JES