J.F. Ziegler
Applied Physics Letters
The theoretical description of transistors has been impeded by the lack of knowledge of the p-type impurity distributions. A method is described which accurately gives concentration profiles of the boron p-type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed. © 1972 The American Institute of Physics.
J.F. Ziegler
Applied Physics Letters
J.F. Ziegler, W.A. Lanford
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