A. Lurio, J.A. Cairns, et al.
Physical Review A
The theoretical description of transistors has been impeded by the lack of knowledge of the p-type impurity distributions. A method is described which accurately gives concentration profiles of the boron p-type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed. © 1972 The American Institute of Physics.
A. Lurio, J.A. Cairns, et al.
Physical Review A
M.H. Tabacniks, A.J. Kellock, et al.
MRS Spring Meeting 1995
J.F. Ziegler, G.W. Cole, et al.
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Nuclear Instruments and Methods In Physics Research