Conference paper
New polysilicon disposable sidewall process for sub-50 nm CMOS
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Line defects in an amorphous Lennard-Jones solid have been studied using computer simulation techniques with static relaxation. It has been found that both edge and screw dislocations can be stably introduced into the model and can be moved through the model to form a diffuse step on the surface of the model. © 1986.
K.L. Lee, D. Boyd, et al.
ESSDERC 2001
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