E.F. Crabbé, B.S. Meyerson, et al.
IEEE Transactions on Electron Devices
Low-temperature photoluminescence (PL) spectroscopy was used to study electronic states associated with threading dislocations (D lines) in strain-relaxed Si1-xGex layers. The structures investigated were grown by ultrahigh vacuum chemical vapor deposition at 550 °C and consist of a Si(001) substrate, followed by a stepwise graded buffer layer, followed by a thick uniform composition Si1-x.Gex layer. The PL peak positions of the four D lines after isochronal annealing at temperatures between 600 and 800 °C were measured. We show that the large energy shift of the D1 line is due to a change in the local band gap energy at the dislocation core due to strain-driven diffusion of Ge atoms away from the dislocation core with an activation energy E11. which varies with Ge mole fraction x. © 1997 American Institute of Physics.
E.F. Crabbé, B.S. Meyerson, et al.
IEEE Transactions on Electron Devices
S.J. Koester, R. Hammond, et al.
DRC 2000
G. Dehlinger, J. Schaub, et al.
LEOS 2005
P.M. Mooney, F. Legoues, et al.
Applied Physics Letters