Dopant effect on intrinsic diffusivity in nickel silicide

Abstract

The effect of P on the diffusivity of Ni and Si in Ni2Si has been studied by analyzing the growth kinetics of Ni2Si on P-doped and undoped polycrystalline Si films using W markers. The growth of Ni2Si during the reaction of Ni and the P-doped Si films is faster than that of Ni and the undoped Si films. Marker analysis showed that the dopant does not affect the activation energies of diffusion; rather it increases greatly the preexponential factor of the diffusion of Si. The dopant effect has been examined in terms of the correlation factor and the entropy factor. © 1988 The American Physical Society.