Ning Li, Kevin Han, et al.
Advanced Materials
We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3) and a pseudo PCE of (10.2 ± 0.2) has been achieved for the solar cell with epi-emitter grown at 700 C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells. © 2011 American Institute of Physics.
Ning Li, Kevin Han, et al.
Advanced Materials
Talia S. Gershon, Kasra Sardashti, et al.
Advanced Energy Materials
Yongshin Kim, Hannes Hempel, et al.
Journal of Materials Chemistry A
Daehan Kim, Gee Yeong Kim, et al.
Journal of Physical Chemistry C