G.M. Blom, J. Woodall
Journal of Electronic Materials
Double-heterostructure light-emitting diodes (LEDs) consisting of an n-Ga0.51In0.49P emitter, a carbon-doped p-GaAs active layer, and a p-Al0.30Ga0.70As cladding layer have been grown by gas source molecular beam epitaxy with halomethane carbon doping sources. CCl4 and CHCl3 have been used to vary the active layer C doping level from 1018 to 1020 cm-3. Measurements of LED optical modulation bandwidth indicate that the bandwidth increases with C doping, attaining a record value of 1.6 GHz at 1020 cm-3 C concentration. The LED radiance is observed to decline significantly in the 1019-1020 cm-3 range.
G.M. Blom, J. Woodall
Journal of Electronic Materials
R.M. Feenstra, J. Woodall, et al.
Physical Review Letters
X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
M.R. Melloch, Alan C. Warren, et al.
IEEE T-ED