G. Burns, E.A. Giess, et al.
Journal of Applied Physics
The single-crystal growth of the cubic spinel, MgGa2O 4, by the Czochralski technique is reported. Moreover, experiments are described in which this material is used as a substrate for the first direct (single-step) liquid-phase epitaxial growth of 〈111〉 (Ga,Al)As. © 1972 The American Institute of Physics.
G. Burns, E.A. Giess, et al.
Journal of Applied Physics
J.F. Bringley, B.A. Scott, et al.
NIST Special Publication
J.Q. Chambers, D.C. Green, et al.
Analytical Chemistry
J.W. Huang, D.F. Gaines, et al.
Journal of Electronic Materials