G. Arjavalingam, J.-M. Halbout, et al.
TMPEO 1986
We demonstrate a novel technique for enhancing metal-semiconductor-metal photodetector bandwidths without reducing responsivity. We have observed bandwidth increases of up to 10 GHz from control to enhanced photodetectors which corresponds to about 70% enhancement. This technique involves modifying the internal electric field structure, by introducing a buried n-type doped layer that is completely depleted, to reduce the relatively long hole transit time. © 1991 IEEE
G. Arjavalingam, J.-M. Halbout, et al.
TMPEO 1986
G. Arjavalingam, Barry J. Rubin
SPIE OE/LASE 1988
Paul May, S. Basu, et al.
Journal of Lightwave Technology
J.H. Burroughes, M.S. Milshtein, et al.
IEEE Photonics Technology Letters