Lateral p-i-n photodetectors with 18 GHz bandwidth at 1.3 μ m wavelength and small bias voltages
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1991
- IEDM 1991
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10 results for J.H. Burroughes
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
Light-emitting diodes based on conjugated polymers
- J.H. Burroughes
- D.D.C. Bradley
- et al.
- 1990
- Nature
3.5 GHz GaAs/Al0.3Ga0.7As I-MSM photodetector, compatible with heterostructure transistor technology
- J.H. Burroughes
- 1990
- ECOC 1990
The Frequency Behavior of InGaAs/AlInAs Metal - Semiconductor - Metal Photodetectors at Low Bias Voltages for Data Communication Applications
- J.H. Burroughes
- M.S. Milshtein
- et al.
- 1992
- IEEE Photonics Technology Letters
Lateral Ga0.47In0.53As and GaAs p-i-n Photodetectors by Self-Aligned Diffusion
- Sandip Tiwari
- Jeremy Burroughes
- et al.
- 1992
- IEEE Photonics Technology Letters
1.3 μm InGaAs MSM photodetector with abrupt ingaas/alinas interface
- J.H. Burroughes
- M. Hargis
- 1991
- IEEE Photonics Technology Letters
IVA-5 GaAs Sees THE Light
- M.R. Melloch
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
GaAs sees the light
- J. Woodall
- Alan C. Warren
- et al.
- 1991
- IEEE T-ED
Doping-Induced Bandwidth Enhancement in Metal-Semiconductor-Metal Photodetectors
- J.H. Burroughes
- D.L. Rogers
- et al.
- 1991
- IEEE Photonics Technology Letters