Conference paper
Ultrafast graphene photodetector
Fengnian Xia, Thomas Mueller, et al.
CLEO 2010
A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 2/V * s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This fT value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications. © 2006 IEEE.
Fengnian Xia, Thomas Mueller, et al.
CLEO 2010
Kausik Majumdar, Kota V. R. M. Murali, et al.
Applied Physics Letters
Yanqing Wu, Damon Farmer, et al.
IEDM 2011
Fengnian Xia, Thomas Mueller, et al.
GFP 2009