R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
J. Tersoff
Applied Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007