Julien Autebert, Aditya Kashyap, et al.
Langmuir
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Zelek S. Herman, Robert F. Kirchner, et al.
Inorganic Chemistry