Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings