Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery