PaperEffects of higher sub-band occupation in (100) Si inversion layersW.E. Howard, F. FangPhysical Review B
PaperEffects of low-energy electron irradiation on Si-insulated gate fetsA.J. Speth, F. FangApplied Physics Letters
PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructuresF. Fang, T.P. Smith III, et al.Surface Science
PaperVariation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layersA. Hartstein, F. FangPhysical Review B
