PaperEffect of surface scattering on electron mobility in an inversion layer on p-type siliconF. Fang, S. TriebwasserApplied Physics Letters
PaperLandau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructuresF. Fang, T.P. Smith III, et al.Surface Science
PaperIntersubband resonances in sosmos accumulation layersM.J. Uren, T.N. Theis, et al.Solid State Communications
PaperTwo-dimensional hole gas in Si/Si0.85Ge0.15/Si modulation-doped double heterostructuresP.J. Wang, F. Fang, et al.Applied Physics Letters