Exploiting the State Dependency of Conductance Variations in Memristive Devices for Accurate In-Memory Computing
- 2023
- IEEE T-ED
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Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format
- Pritish Narayanan
- Stefano Ambrogio
- et al.
- 2021
- IEEE T-ED
Compressed Sensing with Approximate Message Passing Using In-Memory Computing
- 2018
- IEEE T-ED
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory under Pulsed Cycling Regime
- Roberto Carboni
- Stefano Ambrogio
- et al.
- 2018
- IEEE T-ED
Nanoscale Accumulated Body Si nMOSFETs
- Mustafa B. Akbulut
- Faruk Dirisaglik
- et al.
- 2018
- IEEE T-ED
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1: Experimental Devices
- Kirsten E. Moselund
- D. Cutaia
- et al.
- 2016
- IEEE T-ED
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2: Simulation Study of the Impact of Interface Traps
- Saurabh Sant
- Kirsten E. Moselund
- et al.
- 2016
- IEEE T-ED
Corrections to "on the ballistic injection velocity in deeply scaled MOSFETs"
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
PERPENDICULAR TRANSPORT MEASUREMENTS IN GaAs/(Al,Ga)As/GaAs HETEROSTRUCTURES.
- P. Solomon
- S.L. Wright
- 1986
- IEEE T-ED
ReSta: Recovery of Accuracy During Training of Deep Learning Models in a 14-nm Technology-Based ReRAM Array
- Fabia Farlin Athena
- Nanbo Gong
- et al.
- 2023
- IEEE T-ED