Effect of HCI degradation on the variability of MOSFETS

Abstract

The effect of HCI (hot-carrier injection) degradation on the variability of FETs is studied with a novel test structure. Using a space-and time-efficient technique, a large number of degradation measurements can be taken in the time usually required for a single device. Studies with this structure have shown that variability is actually reduced by the degradation caused by HCI stress.