E.B. Foxman, P.L. McEuen, et al.
Physical Review B
Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.
E.B. Foxman, P.L. McEuen, et al.
Physical Review B
M. Eizenberg, Armin Segmüller, et al.
Journal of Applied Physics
E. Mendez, L.L. Chang, et al.
Physical Review B
B. Laikhtman, R.A. Kiehl, et al.
Journal of Applied Physics