B.B. Goldberg, T.P. Smith, et al.
Surface Science
Analyzing possible relaxation mechanisms in two-dimensional electron gas in GaAs-AlGaAs inverted structures we show that the existence of unintentional acceptor doping in the AlGaAs barriers, with concentration as high as 10 17 cm-3, provides the only explanation for the observed transport and single particle relaxation times.
B.B. Goldberg, T.P. Smith, et al.
Surface Science
M.I. Nathan, M. Heiblum
IEEE T-ED
B. Laikhtman, R.A. Kiehl, et al.
Applied Physics Letters
U. Meirav, M. Heiblum, et al.
Applied Physics Letters