Long mean free path of hot electrons selectively injected to higher subbands
- B. Laikhtman
- U. Sivan
- et al.
- 1990
- Physical Review Letters
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
Date
Featured collections
Popular topics
14 results for B. Laikhtman
Remote phonon scattering in field-effect transistors with a high κ insulating layer
- B. Laikhtman
- P. Solomon
- 2008
- Journal of Applied Physics
DC transformer: Dream or reality?
- B. Laikhtman
- P. Solomon
- 2006
- Solid State Communications
Electron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers
- Boris Laikhtman
- Paul M. Solomon
- 2005
- Physical Review B - CMMP
Magnetotransport of coupled electron-holes
- Y. Naveh
- B. Laikhtman
- 2001
- Europhysics Letters
Electrical and physical properties of high-Ge-content Si/SiGe p-type quantum wells
- R.A. Kiehl
- P.E. Batson
- et al.
- 1993
- Physical Review B
Theoretical hole mobility in a narrow Si/SiGe quantum well
- B. Laikhtman
- R.A. Kiehl
- 1993
- Physical Review B
Strained quantum well valence-band structure and optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors
- B. Laikhtman
- R.A. Kiehl
- et al.
- 1991
- Journal of Applied Physics
Optimal parameters for AlGaAs-InGaAs-AlGaAs p-channel field-effect transistors
- B. Laikhtman
- R.A. Kiehl
- et al.
- 1991
- Applied Physics Letters
Current-voltage characteristic of double normal tunnel junctions
- B. Laikhtman
- 1991
- Physical Review B