Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

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Ion-beam-assisted etching of Si with fluorine at low temperatures

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Elemental composition profiling in thin films by glow-discharge mass spectrometry: Depth resolution

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Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar system

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In situ Auger electron spectroscopy of Si and SiO₂ surfaces plasma etched in CF₄-H₂ glow discharges

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Abstract

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Ion-beam-assisted etching of Si with fluorine at low temperatures

Elemental composition profiling in thin films by glow-discharge mass spectrometry: Depth resolution

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