Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

The role of energetic ion bombardment in silicon-fluorine chemistry

J.W. Coburn, H.F. Winters

Nuclear Inst. and Methods in Physics Research, B

Paper

Plasma-assisted etching: Ion-assisted surface chemistry

J.W. Coburn, Harold F. Winters

Applications of Surface Science

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Quartz crystal microbalance simulation of the directionality of Si etching in CF₄ glow discharges

Natasha C.Us, R.W. Sadowski, et al.

Plasma Chemistry and Plasma Processing

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An XPS and Auger investigation of CF⁺₃ ion bombardment of silicon

T.J. Chuang, H.F. Winters, et al.

Applications of Surface Science

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Abstract

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