Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

View publication

Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

Positive-ion bombardment of substrates in rf diode glow discharge sputtering

J.W. Coburn, Eric Kay

Journal of Applied Physics

Paper

Conductance considerations in the reactive ion etching of high aspect ratio features

J.W. Coburn, Harold F. Winters

Applied Physics Letters

Paper

Plasma etching a "pseudo-black-box" approach

Harold F. Winters, J.W. Coburn, et al.

Journal of Applied Physics

Paper

Mechanisms in plasma-assisted etching

J.W. Coburn

Physica Scripta

View all publications

Abstract

Related

Positive-ion bombardment of substrates in rf diode glow discharge sputtering

Conductance considerations in the reactive ion etching of high aspect ratio features

Plasma etching a "pseudo-black-box" approach

Mechanisms in plasma-assisted etching