Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

F. Fracassi; E. Occhiello; J.W. Coburn

doi:10.1063/1.339197

Journal of Applied Physics

Paper

01 Dec 1987

Effect of ion bombardment on the plasma-assisted etching and deposition of plasma perfluoropolymer thin films

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Abstract

A study of the etching and deposition of plasma perfluoropolymer thin films has been carried out by using quartz-crystal microbalance methods for a range of feed gas mixtures.

Paper

Etching of silicon and silicon dioxide by halofluorocarbon plasmas

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Journal of Physics D: Applied Physics

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In situ Auger electron spectroscopy of Si and SiO₂ surfaces plasma etched in CF₄-H₂ glow discharges

J.W. Coburn

Journal of Applied Physics

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Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

F. Fracassi, J.W. Coburn

Journal of Applied Physics

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Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system

K. Köhler, D.E. Horne, et al.

Journal of Applied Physics

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Abstract

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Etching of silicon and silicon dioxide by halofluorocarbon plasmas

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Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study

Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system

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