Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Thin films of YBa2Cu3O7-x were r.f. and d.c. magnetron sputter deposited onto silicon, Al2O3, MgO, BaTiO3 and SrTiO3 substrates at up to 700°C from a stoichiometric oxide target in an argon and O2 mixture. Stoichiometric films were obtained using a substrate-to-target configuration so that bombardment of the growing film by energetic particles is minimized. These films show an ending Tc of about 87 K when deposited on SrTiO3(100) at 300°C and after annealing in flowing O2 at 900°C for about 1 min, or an ending Tc of 76 K when deposited on Si(100) at 650°C without further high temperature treatments. The effects of substrate, deposition temperature, and substrate bias on the superconducting properties of these films are presented. © 1988.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010