Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previously unreported near-surface traps. The depth profiles of the observed traps have been determined, and their annealing behaviour is studied up to 200°C. A tentative association of these traps with strain-induced defects resulting from deuterium platelet formation or with vacancy-related defect complexes is proposed. © 1989.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Lawrence Suchow, Norman R. Stemple
JES
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
M. Hargrove, S.W. Crowder, et al.
IEDM 1998