S. Washburn, R.A. Webb, et al.
International Conference on Low Temperature Physics (LT) 1983
Measurements of the tunneling rate " out of the zero-voltage state for several Nb edge junctions with differing shunt capacitances are described. At zero temperature, increasing the shunt capacitance lowers " in agreement with dissipative calculations of the macroscopic-quantum-tunneling rate. As temperature increases, ln["(T)"(0)]T2 as recently predicted. © 1985 The American Physical Society.
S. Washburn, R.A. Webb, et al.
International Conference on Low Temperature Physics (LT) 1983
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984
Dragana Popovic̀, A.B. Fowler, et al.
Physica B: Condensed Matter
A.B. Fowler, A. Hartstein, et al.
Physical Review Letters