Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
This paper briefly reviews literature on the effects of major materials and testing parameters on the corrosion rates of Al conductor lines in contact with phosphosilicate glass layers in integrated circuits. In an effort to assess the relative importance of these parameters on Al corrosion, selected literature findings are combined into a generalized rate equation that can be used to estimate Al conductor lifetimes under a wide range of conditions and to guide in the development of future experiments to address this highly complex problem more precisely. Al corrosion mechanisms and polarity effects are also briefly discussed. © 1982, The Electrochemical Society, Inc. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R.W. Gammon, E. Courtens, et al.
Physical Review B
Julien Autebert, Aditya Kashyap, et al.
Langmuir
T.N. Morgan
Semiconductor Science and Technology