T. Kornuta, Deepta Rajan, et al.
CLEF 2019
Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth. © 2013 AIP Publishing LLC.
T. Kornuta, Deepta Rajan, et al.
CLEF 2019
Simone Raoux, Charles T. Rettner, et al.
NVMTS 2007
Nicolas Breil, A. Carr, et al.
VLSI Technology 2017
Simone Raoux, Robert M. Shelby, et al.
Microelectronic Engineering