PaperOn the nature of point defects and the effect of oxidation on substitutional dopant diffusion in siliconT.Y. Tan, U. Gösele, et al.Applied Physics A Solids and Surfaces
PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
PaperSelf-compensation-limited conductivity in binary semiconductors. III. Expected correlations with fundamental parametersG. Mandel, F.F. Morehead, et al.Physical Review
