Peter Nirmalraj, Damien Thompson, et al.
Nature Materials
We have investigated the electrical and thermoelectrical properties of 30-nm-thick InAs nanowires in a temperature range between T = 200 K and T = 350 K. Devices were fabricated that allow the measurement of the conductivity and Seebeck coefficient upon the application of a gate voltage. The carrier concentration in the NWs could be varied by two orders of magnitude. The dependence of the Seebeck coefficients measured on the carrier concentration is similar to bulk InAs. A temperature-dependent mobility of μ = 1200-1400 cm2/Vs of these unpassivated NWs could be determined from both the transistor characteristics and Seebeck coefficient measurements. © 2013 IEEE.
Peter Nirmalraj, Damien Thompson, et al.
Nature Materials
Valeria Bragaglia, Donato Francesco Falcone, et al.
B-MRS 2024
Philipp Mensch, Siegfried Karg, et al.
Applied Physics Letters
F. Menges, Fabian Motzfeld, et al.
IEDM 2016