Electrical resistivity of acceptor carbon in GaAs

Abstract

The resistivity of GaAs implanted with carbon acceptors for concentrations spanning the insulating to the metallic regimes were investigated experimentally and theoretically between room temperature and 1.7 K. The resistivities obtained experimentally were compared with resistivity values calculated from a generalized Drude approach. The value of the critical impurity concentration was found to be about 10 18cm -3. Good agreement was obtained between the experimental results and calculations.