Self-aligned III-V MOSFETs: Towards a CMOS compatible and manufacturable technology solution
- Y. Sun
- A. Majumdar
- et al.
- 2013
- IEDM 2013
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39 results for Joel P. de Souza
Improving silicon crystallinity by grain reorientation annealing
- K.L. Saenger
- J.P. De Souza
- et al.
- 2009
- MRS Spring Meeting 2009
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- B. Yang
- R. Takalkar
- et al.
- 2008
- IEDM 2008
Scaling of ino.7gao.3as buried-channel MOSFETs
- Yanning Sun
- E.W. Kiewra
- et al.
- 2008
- IEDM 2008
Effect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers
- Katherine L. Saenger
- Stephen W. Bedell
- et al.
- 2008
- MRS Spring Meeting 2008
Amorphization/templated recrystallization (ATR) method for hybrid orientation substrates
- K.L. Saenger
- J.P. De Souza
- et al.
- 2006
- MRS Spring Meeting 2006
High performance CMOS bulk technology using direct silicon bond (DSB) mixed crystal orientation substrates
- Chun-Yung Sung
- Haizhou Yin
- et al.
- 2005
- IEDM 2005
Strained high percentage (60%) boron doped silicon-germanium alloys - Strain, dopant substitionality, carrier concentration, resistivity, and microstructure development
- Alexander Reznicek
- Thomas N. Adam
- et al.
- 2012
- ISTDM 2012
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009