A. Hartstein, J.C. Tsang, et al.
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Paper
Electroluminescence emission from indium oxide and indium-tin-oxide
Abstract
Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In 2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In 2O3. The intensity of the light is found to depend on the applied electric field.
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