Retention and endurance of FeFET memory cells
- T. P. Ma
- Nanbo Gong
- 2019
- IMW 2019
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18 results for T. P. Ma
Black phosphorus mid-infrared photodetectors with high gain
- Qiushi Guo
- Andreas Pospischil
- et al.
- 2016
- Nano Letters
High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005
Charge trapping in ultrathin hafnium oxide
- W. Zhu
- T.P. Ma
- et al.
- 2002
- IEEE Electron Device Letters
Thickness measurement of ultra-thin gate dielectrics under inversion condition
- W. Zhu
- Mukesh Khare
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Thermally stable ultra-thin Zr silicate for CMOS applications
- Z. Luo
- T.P. Ma
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
- Wu Lu
- Steven J. Koester
- et al.
- 2000
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
A front-gate charge-pumping method for probing both interfaces in SOI devices
- Yujun Li
- T.P. Ma
- 1998
- IEEE Transactions on Electron Devices