High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005
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18 results for T. P. Ma
Charge trapping in ultrathin hafnium oxide
- W. Zhu
- T.P. Ma
- et al.
- 2002
- IEEE Electron Device Letters
p-Type SiGe transistors with low gate leakage using SiN gate dielectric
- W. Lu
- X.W. Wang
- et al.
- 1999
- IEEE Electron Device Letters
Random Telegraph Signals in Accumulation-Mode SOI/nMOSFET
- Ming-Horn Tsai
- Tso-Ping Ma
- et al.
- 1994
- IEEE Electron Device Letters
Effects of X-Ray Irradiation on GIDL in MOSFET's
- Alexandre Acovic
- Charles Ching-Hsiang Hsu
- et al.
- 1992
- IEEE Electron Device Letters
Retention and endurance of FeFET memory cells
- T. P. Ma
- Nanbo Gong
- 2019
- IMW 2019
The photorefractive effect in doped bismuth silicon oxide crystals
- R.R. Dube
- D. Just
- et al.
- 1989
- Proceedings of SPIE 1989
Black phosphorus mid-infrared photodetectors with high gain
- Qiushi Guo
- Andreas Pospischil
- et al.
- 2016
- Nano Letters
Thermally stable ultra-thin Zr silicate for CMOS applications
- Z. Luo
- T.P. Ma
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Thickness measurement of ultra-thin gate dielectrics under inversion condition
- W. Zhu
- Mukesh Khare
- et al.
- 2001
- International Symposium on VLSI Technology, Systems, and Applications, Proceedings