S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
We calculate the Hall coefficient and the magnetoresistance of an interacting two-carrier system. Our results, derived from two simple coupled kinetic equations, are identical to those obtained from the coupled Boltzmann equations. Specializing to a semimetal, we calculate RH and as a function of doping and pressure. We find that a strong electron-electron interaction has a large effect on these quantities. © 1979 The American Physical Society.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J. Tersoff
Applied Surface Science
Robert W. Keyes
Physical Review B
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures