Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
We calculate the Hall coefficient and the magnetoresistance of an interacting two-carrier system. Our results, derived from two simple coupled kinetic equations, are identical to those obtained from the coupled Boltzmann equations. Specializing to a semimetal, we calculate RH and as a function of doping and pressure. We find that a strong electron-electron interaction has a large effect on these quantities. © 1979 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences
Eloisa Bentivegna
Big Data 2022