C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
The use of the scanning tunneling microscope (STM) as an excitation source and a probe of electron stimulated desorption on the atomic scale is reviewed. The case of H desorption from H-terminated Si(001) is examined in detail. Experimental results on excitation thresholds, desorption cross-sections, isotope effects and site-selectivities are presented. Evidence for mechanisms involving direct electronic and hot ground-state desorption, as well as a novel multiple-vibrational excitation mechanism is discussed. Using the latter mechanism, the ultimate resolution limit of selective single atom desorption is achieved. New results on desorption from Si dihydride, including a proposed mechanism for the STM-induced H/Si(001)-3 × 1 to 2 × 1 conversion, are presented. Possible applications of STM-induced desorption in nanofabrication are considered. © 1997 Elsevier Science B.V.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
J. Tersoff
Applied Surface Science