Conference paper
0.1 μm technology and BEOL
T.H. Ning
MRS Spring Meeting 1996
Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10-13 cm 2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.
T.H. Ning
MRS Spring Meeting 1996
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
N.J. Chou, C.M. Osburn, et al.
Applied Physics Letters
C.C.-H. Hsu, D.S. Wen, et al.
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