Conference paper
23 ps/2.1 mW ECL gate
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
Evidence is presented which indicates that positive oxide charge centers in thin films of thermally grown silicon dioxide are electron traps with an average capture cross section of 3±2×10-13 cm 2 at room temperature and at an average oxide field of about 7×105 V/cm. Positive charge centers of other origins are also expected to be electron traps with about the same capture cross section.
Kai-Yap Toh, C.T. Chuang, et al.
ISSCC 1989
T.H. Ning, C.M. Osburn, et al.
Journal of Electronic Materials
T.H. Ning
Journal of Applied Physics
E. Bassous, H.N. Yu, et al.
JES