1 µm MOSFET VLSI Technology: Part V—A Single-Level Polysilicon Technology Using Electron-Beam Lithography
- William R. Hunter
- Linda Ephrath
- et al.
- 1979
- IEEE JSSC
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22 results for C.M. Osburn
1 µm MOSFET VLSI Technology: Part I-An Overview
- Dale L. Critchlow
- Arnold Reisman
- et al.
- 1979
- IEEE JSSC
1, μm MOSFET VLSI Technology: Part IV-Hot-Electron Design Constraints
- Tak H. Ning
- Peter W. Cook
- et al.
- 1979
- IEEE JSSC
Properties of SiO2 Grown in the Presence of HCl or Cl2
- Y.J. van der Meulen
- C.M. Osburn
- et al.
- 2019
- JES
Improved Dielectric Reliability of SiO2 Films with Polycrystalline Silicon Electrodes
- C.M. Osburn
- E. Bassous
- 2019
- JES
Properties of AI2O3 Films Deposited from the AICI3, CO2, and H2 System
- V.J. Silvestri
- C.M. Osburn
- et al.
- 2019
- JES
Elimination of End-of-Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation
- G.A. Rozgonyi
- 2019
- JES
Electron trapping at positively charged centers in SiO2
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
Threshold instability in IGFET's due to emission of leakage electrons from silicon substrate into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Applied Physics Letters
Emission probability of hot electrons from silicon into silicon dioxide
- T.H. Ning
- C.M. Osburn
- et al.
- 2008
- Journal of Applied Physics