Z.A. Weinberg, D.R. Young, et al.
Applied Physics Letters
The electron trapping behavior of SiO2 has been measured as a function of thickness at 295 and 77 °K. The devices used were metal-oxide-semiconductor devices with the SiO2 grown thermally. The results indicate bulk traps are dominant at 295 °K and traps associated with the Si-SiO2 interface are dominant at 77 °K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I-V technique. The generation of donor states in the SiO2 near the Si-SiO2 interface was observed as a result of the electron current through the SiO2.
Z.A. Weinberg, D.R. Young, et al.
Applied Physics Letters
D.J. DiMaria, T.N. Theis, et al.
Journal of Applied Physics
G.W. Rubloff, K. Hofmann, et al.
Physical Review Letters
A. Hartstein, Z.A. Weinberg, et al.
Physical Review B