D.J. DiMaria, D.W. Dong
IEEE T-ED
Impurities initially present on a Si surface can be detected using the photo I-V technique. An Al impurity deposited to a thickness less than 8 Å on a silicon substrate which was subsequently oxidized, capped by a chemically vapor deposited (CVD) SiO2 layer, and incorporated into a capacitor structure with an Al gate electrode was found mostly near the interface between the thermal and CVD oxides using the photo I-V technique. This impurity layer which was probably converted to Al2O3 showed greatly enhanced electron trapping compared to either oxide layer.
D.J. DiMaria, D.W. Dong
IEEE T-ED
D.W. Dong, E.A. Irene, et al.
JES
B.N. Eldridge, W. Reuter, et al.
ACS PMSE 1989
D.J. DiMaria
Journal of Applied Physics